Topological Magnonics: A Paradigm for Spin-Wave Manipulation and Device Design

X. S. Wang, H. W. Zhang, and X. R. Wang
Phys. Rev. Applied 9, 024029 – Published 27 February 2018

Abstract

Conventional magnonic devices use magnetostatic waves whose properties are sensitive to device geometry and the details of magnetization structure, so the design and the scalability of the device or circuitry are difficult. We propose topological magnonics, in which topological exchange spin waves are used as information carriers, that do not suffer from conventional problems of magnonic devices with additional nice features of nanoscale wavelength and high frequency. We show that a perpendicularly magnetized ferromagnet on a honeycomb lattice is generically a topological magnetic material in the sense that topologically protected chiral edge spin waves exist in the band gap as long as a spin-orbit-induced nearest-neighbor pseudodipolar interaction (and/or a next-nearest-neighbor Dzyaloshinskii-Moriya interaction) is present. The edge spin waves propagate unidirectionally along sample edges and domain walls regardless of the system geometry and defects. As a proof of concept, spin-wave diodes, spin-wave beam splitters, and spin-wave interferometers are designed by using sample edges and domain walls to manipulate the propagation of topologically protected chiral spin waves. Since magnetic domain walls can be controlled by magnetic fields or electric current or fields, one can essentially draw, erase, and redraw different spin-wave devices and circuitry on the same magnetic plate so that the proposed devices are reconfigurable and tunable. The topological magnonics opens up an alternative direction towards a robust, reconfigurable and scalable spin-wave circuitry.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 7 June 2017
  • Revised 29 June 2017

DOI:https://doi.org/10.1103/PhysRevApplied.9.024029

© 2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

X. S. Wang1,2, H. W. Zhang1, and X. R. Wang2,3,*

  • 1School of Electronic Science and Engineering and State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China
  • 2Department of Physics, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong
  • 3HKUST Shenzhen Research Institute, Shenzhen 518057, China

  • *Corresponding author. phxwan@ust.hk

Article Text (Subscription Required)

Click to Expand

Multimedia (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 9, Iss. 2 — February 2018

Subject Areas
Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Applied

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×