${}_{}{}^{111}{}_{}{}^{}\mathrm{In}$ was implanted into intrinsic silicon. After annealing of the samples to remove radiation damage caused by the implantation process the hyperfine interaction of the daughter nucleus${,}^{111}$Cd was studied as a function of temperature by means of the time-differential perturbed-angular-correlation technique. The spectra show that dynamical and static hyperfine interactions were superimposed. This fact is explained in terms of two sites for probe atoms in the silicon matrix, the substitutional and the tetrahedral interstitial sites. In both sites the electron-capture decay of ${}_{}{}^{111}{}_{}{}^{}\mathrm{In}$ has a different effect on the angular correlation. The static component is a distribution of electric quadrupole interactions with the frequency centroid increasing linearly with 1/T between 24 and 100 K. These interactions are assigned to cadmium in substitutional sites. The possibility that these interactions are produced by holes bound to the cadmium-acceptor ions is discussed.

• Received 15 September 1986

DOI:https://doi.org/10.1103/PhysRevB.35.1560