Sputtering by fast ions based on a sum of impulses

R. E. Johnson, B. U. R. Sundqvist, A. Hedin, and D. Fenyö
Phys. Rev. B 40, 49 – Published 1 July 1989
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Abstract

A simple, unifying description of the sputtering of solids by fast ions is obtained by summing impulses. For both electronic and collisional energy deposition, the scaling of the yield versus energy deposition per unit path length (dE/dx) is in agreement with experiment in three different regions of (dE/dx), each exhibiting different ejection characteristics: single events, ‘‘diffusive spike,’’ and ‘‘pressure pulse.’’ The latter is a volume ejection mechanism for which the yield scales as (dE/dx)3 at high (dE/dx) when the ion penetration depth is large. This mechanism can account for the observed dependence of the yield of intact biomolecules ejected from the solid state and the ejection angles for the intact molecular ions.

  • Received 24 March 1989

DOI:https://doi.org/10.1103/PhysRevB.40.49

©1989 American Physical Society

Authors & Affiliations

R. E. Johnson

  • Department of Nuclear Engineering and Engineering Physics, University of Virginia, Charlottesville, Virginia 22901

B. U. R. Sundqvist, A. Hedin, and D. Fenyö

  • Department of Radiation Sciences, University of Uppsala, Uppsala, Sweden

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Vol. 40, Iss. 1 — 1 July 1989

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