Inverse-photoemission spectroscopy of GaSe and InSe

R. Sporken, R. Hafsi, F. Coletti, J. M. Debever, P. A. Thiry, and A. Chevy
Phys. Rev. B 49, 11093 – Published 15 April 1994
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Abstract

The lamellar semiconductors GaSe and InSe have been studied with k-resolved inverse-photoemission spectroscopy along two major symmetry directions (Γ¯ K¯ and Γ¯ M¯) of the surface Brillouin zone. Three bands with well-resolved features are observed from which the dispersion of the conduction bands can be determined with good precision. The minimum of the conduction band is found at M¯ in GaSe and at Γ¯ in InSe. These results are compared with theoretical studies using pseudopotential and tight-binding calculations.

  • Received 6 August 1993

DOI:https://doi.org/10.1103/PhysRevB.49.11093

©1994 American Physical Society

Authors & Affiliations

R. Sporken, R. Hafsi, F. Coletti, and J. M. Debever

  • Groupe de Physique des Etats Condensés, Université Aix-Marseille II, Case 901, F-13288 Marseille Cedex 9, France

P. A. Thiry

  • Laboratoire Interdisciplinaire de Spectroscopie Electronique, Facultés Universitaires Notre Dame de la Paix, Rue de Bruxelles 61, B-5000 Namur, Belgium

A. Chevy

  • Physique des Milieux Condensés, Université Pierre et Marie Curie, 75252 Paris Cedex 05, France

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Vol. 49, Iss. 16 — 15 April 1994

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