Quasiperiodic and chaotic self-excited voltage oscillations in <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">TlInTe</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span>

M. P. Hanias; J. A. Kalomiros; Ch. Karakotsou; A. N. Anagnostopoulos; J. Spyridelis

doi:10.1103/PhysRevB.49.16994

Quasiperiodic and chaotic self-excited voltage oscillations in ${TlInTe}_{2}$

M. P. Hanias, J. A. Kalomiros, Ch. Karakotsou, A. N. Anagnostopoulos, and J. Spyridelis

Phys. Rev. B 49, 16994 – Published 15 June 1994

Abstract

The electrical behavior of the ${TlInTe}_{2}$ ternary semiconductor is studied in the negative-differential-resistance region of its S-type I-V characteristic. Self-excited voltage oscillations in this region, with an amplitude of about 5 V were monitored at temperatures above 70 K. An analysis of the dynamic behavior of these oscillations by means of the Grassberger and Proccacia method shows the existence of two components in the signal, a quasiperiodic component and a chaotic component. Furthermore, this analysis leads to the estimation of fractal dimensions, minimum embedding dimensions and Kolmogorov entropies that characterize the two components.

Received 21 March 1994

DOI:https://doi.org/10.1103/PhysRevB.49.16994

Authors & Affiliations

M. P. Hanias, J. A. Kalomiros, Ch. Karakotsou, A. N. Anagnostopoulos, and J. Spyridelis

Solid State Section 313-1, Physics Department, University of Thessaloniki, 54006 Thessaloniki, Greece

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Vol. 49, Iss. 24 — 15 June 1994

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