Electronic Energy-Band Structure of SnS2 and SnSe2

C. Y. Fong and Marvin L. Cohen
Phys. Rev. B 5, 3095 – Published 15 April 1972; Erratum Phys. Rev. B 7, 4748 (1973)
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Abstract

The local-empirical-pseudopotential method is used to calculate the electronic band structure of SnS2 and SnSe2. The pseudopotential form factors for the constituent elements Sn, S, and Se are determined from previous pseudopotential calculations for other crystals. Slight adjustments were made to give the correct fundamental gaps. A group-theoretical study of the symmetry properties of these crystals is included. The imaginary part of the dielectric function, ε2(ω), is calculated for SnS2. Some comparison is made between the theory and the existing experimental data.

  • Received 6 July 1971

DOI:https://doi.org/10.1103/PhysRevB.5.3095

©1972 American Physical Society

Erratum

Electronic Energy Band Structure of SnS2 and SnSe2

C. Y. Fong and Marvin L. Cohen
Phys. Rev. B 7, 4748 (1973)

Authors & Affiliations

C. Y. Fong

  • Department of Physics, University of California, Davis, California 95616

Marvin L. Cohen*

  • Department of Physics, University of California, Berkeley, California 94720
  • Inorganic Material Research Division, Lawrence Radiation Laboratory, Berkeley, California 94720

  • *Work supported in part by the National Science Foundation under Grant No. 13632.

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Issue

Vol. 5, Iss. 8 — 15 April 1972

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