Fermi-edge singularities in photoluminescence from modulation-doped GaAs quantum wells

S. A. Brown, Jeff F. Young, Z. Wasilewski, and P. T. Coleridge
Phys. Rev. B 56, 3937 – Published 15 August 1997
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Abstract

We have performed a detailed study of low-temperature photoluminescence (PL) from a pair of modulation-doped GaAs/AlxGa1xAs multiple-quantum-well samples finding weak Fermi-edge singularities (FES’s) associated with both heavy-hole and light-hole subbands. In contrast to previous experiments it appears that the presence of the FES’s is not due to hole localization or the proximity of a second electronic subband. The many body enhancement above the single particle background is found to be comparable to that in systems with localized holes. The enhancement of the PL spectrum is significantly stronger than that of the absorption spectra from the same samples. Comparison with previously published data suggests that this asymmetry may be a general property of two-dimensional electron systems.

  • Received 16 January 1997

DOI:https://doi.org/10.1103/PhysRevB.56.3937

©1997 American Physical Society

Authors & Affiliations

S. A. Brown

  • School of Physics, University of New South Wales, Sydney 2052, Australia

Jeff F. Young

  • Department of Physics, University of British Columbia, Vancouver, Canada

Z. Wasilewski and P. T. Coleridge

  • Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada

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Vol. 56, Iss. 7 — 15 August 1997

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