Antisite defects versus grain boundary competition in the tunneling magnetoresistance of the Sr2FeMoO6 double perovskite

D. Niebieskikwiat, F. Prado, A. Caneiro, and R. D. Sánchez
Phys. Rev. B 70, 132412 – Published 29 October 2004

Abstract

We present magnetic and transport measurements on the Sr2FeMoO6 double perovskite, and study the tunneling magnetoresistance (TMR) response when the amount of FeMo disorder (antisite defects) and the grain boundary (GB) properties are changed. We prepared two samples with different amounts of disorder (saturation magnetization MS3.0 and 1.6μB, respectively) and performed several GB oxidation treatments. While MS remained unchanged, the resistivity (ρ) was increased by more than five orders of magnitude after oxidation and the TMR showed an appreciable increase, regardless of the amount of FeMo disorder. At low ρ values, the more disordered sample (MS1.6μB) shows a diminished TMR due to a reduced electron spin polarization. On the contrary, when the GBs dominate in the transport properties the effect of the disorder is washed away and both samples exhibit the same improved TMR values.

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  • Received 4 May 2004

DOI:https://doi.org/10.1103/PhysRevB.70.132412

©2004 American Physical Society

Authors & Affiliations

D. Niebieskikwiat*, F. Prado, A. Caneiro, and R. D. Sánchez

  • Comisión Nacional de Energía Atómica-Centro Atómico, Bariloche and Instituto Balseiro, 8400 Bariloche, Argentina

  • *Present address: Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801, USA.

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Issue

Vol. 70, Iss. 13 — 1 October 2004

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