Electronic properties of metal-induced gap states formed at alkali-halide/metal interfaces

Manabu Kiguchi, Genki Yoshikawa, Susumu Ikeda, and Koichiro Saiki

Phys. Rev. B 71, 153401 – Published 6 April 2005

Abstract

The spatial distribution and site distribution of metal-induced gap states (MIGS) are studied by thickness-dependent near-edge x-ray absorption fine structure (NEXAFS) and by comparing the cation and anion-edge NEXAFS. The thickness-dependent NEXAFS shows that the decay length of MIGS depends on an alkali-halide rather than a metal, and it is larger for alkali-halides with smaller band gap energies. By comparing the Cl-edge and K-edge NEXAFS for $KCl ∕ Cu (001)$ , MIGS are found to be states localizing at anion sites.

Received 21 September 2004

DOI:https://doi.org/10.1103/PhysRevB.71.153401

Authors & Affiliations

Manabu Kiguchi^1,*, Genki Yoshikawa², Susumu Ikeda², and Koichiro Saiki^1,2

¹Department of Complexity Science & Engineering, Graduate School of Frontier Sciences, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
²Department of Chemistry, The University of Tokyo, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

^*Present address: Department of Chemistry, Hokkaido University, Sapporo 060-0810, Japan.

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Vol. 71, Iss. 15 — 15 April 2005

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covering condensed matter and materials physics