Figure 1

General view of the photoluminescence spectra of $\mathrm{P}-\mathrm{Al}$ doped $4H\text{−}\mathrm{Si}\mathrm{C}$ samples compared with the spectrum of the $\mathrm{N}-\mathrm{Al}$ doped sample. The zero phonon bound exciton (BE) lines of the Al-BE and N-BE are marked. The P-BE spectrum shows mainly phonon replicas with polarization perpendicular to the crystal axis, in accord with Ref. 2.Reuse & Permissions

Figure 2

Fit of the DAP PL for the cases of $\mathrm{P}-\mathrm{Al}$ and $\mathrm{N}-\mathrm{Al}$ pair emissions. The black solid lines represent the fit in the fitted region, whereas the dashed lines are the extension of the theoretical curves beyond this region. The variation of the factor $S∕\mid a_1+a_2\mid$ is illustrated in the insets next to the curves representing the fits with two sets. All energies are in meV. The least-squares sum $S$ and the amplitudes are displayed in arbitrary units, which, however, are the same for all fits. The amplitudes of the single fits are displayed for comparison with the amplitudes of the double fits. The line at $3087.5\mathrm{meV}$ is an example of a strong line in the $\mathrm{N}-\mathrm{Al}$ spectrum, which is absent in the $\mathrm{P}-\mathrm{Al}$ one.Reuse & Permissions