Phonon confinement effects in the Raman spectrum of nanodiamond

S. Osswald, V. N. Mochalin, M. Havel, G. Yushin, and Y. Gogotsi
Phys. Rev. B 80, 075419 – Published 18 August 2009

Abstract

Nanodiamonds (ND) exhibit unique properties due to their small size and high surface-to-volume ratio compared to bulk diamonds. A reduction in crystal size also affects ND Raman spectra. The confinement of optical phonons in nanocrystals (<10nm) results in asymmetrically broadened Raman lines, which are shifted toward lower wavenumbers. The phonon confinement model (PCM) relates the observed changes in the Raman spectra to the crystal size and can be used for size characterization at the nanoscale. While the PCM was successfully applied to a variety of materials including Si and BN, results remained unsatisfactory in the case of ND. In order to improve the agreement between the predictions of the model and experimental Raman spectra of ND, effects such as crystal size distribution, lattice defects, and the energy dispersion of the phonon modes were taken into consideration and incorporated into the PCM. This work has shown that phonon wave vectors from small vibrational domains lead to a broad shoulder peak at 1250cm1, that is often observed in the Raman spectrum of ND.

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  • Received 10 May 2009

DOI:https://doi.org/10.1103/PhysRevB.80.075419

©2009 American Physical Society

Authors & Affiliations

S. Osswald1,*, V. N. Mochalin1, M. Havel1,†, G. Yushin2, and Y. Gogotsi1,‡

  • 1Department of Materials Science and Engineering and A. J. Drexel Nanotechnology Institute, Drexel University, Philadelphia, Pennsylvania 19104, USA
  • 2Department of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, N.W., Atlanta, Georgia 30332-0245, USA

  • *Present address: Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
  • Present address: ARKEMA - Groupement de Recherches de Lacq, Groupe NTC - B.P. 34 - 64170 Lacq, France.
  • Corresponding author. FAX: +1-215-895-1934; gogotsi@drexel.edu

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Issue

Vol. 80, Iss. 7 — 15 August 2009

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