We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has a very large and strongly temperature-dependent resistance in the electroneutrality region. We show that fluorination creates a mobility gap in graphene’s spectrum where electron transport takes place via localized electron states.

• Received 2 June 2010

DOI:https://doi.org/10.1103/PhysRevB.82.073403