The $G$-band Raman intensity is calculated for twisted bilayer graphene as a function of laser excitation energy based on the extended tight binding method. Here we explicitly consider the electron-photon and electron-phonon matrix elements of twisted bilayer graphene to calculate the resonance Raman intensity. The $G$-band Raman intensity is sensitive to the laser excitation energy and the twisting angle between the layers as a result of folding the electronic energy band structure. The Van Hove energy singularity, which is an electron transition energy between the conduction and valence bands, depends on $n-m$ of the twisting vector $(n,m)$. The relative intensity of the $G$ band as a function of twisting vectors is presented, which should be useful for the experimental identification of the twisting angle.

• Received 2 July 2012

DOI:https://doi.org/10.1103/PhysRevB.86.125414