Stability and electronic structure of Cu2ZnSnS4 surfaces: First-principles study

Peng Xu, Shiyou Chen, Bing Huang, H. J. Xiang, Xin-Gao Gong, and Su-Huai Wei
Phys. Rev. B 88, 045427 – Published 17 July 2013
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Abstract

Currently little is known about the atomic and electronic structure of Cu2ZnSnS4 (CZTS) surfaces, although the efficiency of kesterite-based solar cells has been increased to over 11%. Through the first-principles calculations, we studied the possible surface structures of the frequently observed cation-terminated (112) and anion-terminated (1¯1¯2¯) surfaces, and found that the polar surfaces are stabilized by the charge-compensating defects, such as vacancies (VCu, VZn), antisites (ZnCu, ZnSn, SnZn), and defect clusters (CuZn+CuSn, 2ZnCu+VSn). In stoichiometric single-phase CZTS samples, Cu-enriched defects are favored on (112) surfaces and Cu-depleted defects are favored on (1¯1¯2¯) surfaces, while in non-stoichiometric samples grown under Cu poor and Zn rich conditions both surfaces favor the Cu-depleted defects, which explains the observed Cu deficiency on the surfaces of the synthesized CZTS thin films. The electronic structure analysis shows that Cu-enriched surfaces produce detrimental states in the band gap, while Cu-depleted surfaces produce no gap states and are thus benign to the solar cell performance. The calculated surface properties are consistent with experimental observation that Cu-poor and Zn-rich CZTS solar cells have higher efficiency.

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  • Received 24 April 2013

DOI:https://doi.org/10.1103/PhysRevB.88.045427

©2013 American Physical Society

Authors & Affiliations

Peng Xu1, Shiyou Chen1,2, Bing Huang3, H. J. Xiang1, Xin-Gao Gong1, and Su-Huai Wei3

  • 1Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
  • 2Key Laboratory of Polar Materials and Devices (MOE), East China Normal University, Shanghai 200241, China
  • 3National Renewable Energy Laboratory, Golden, Colorado 80401, USA

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Issue

Vol. 88, Iss. 4 — 15 July 2013

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