Anisotropic magnetoresistance driven by surface spin-orbit scattering

Steven S.-L. Zhang, Giovanni Vignale, and Shufeng Zhang
Phys. Rev. B 92, 024412 – Published 13 July 2015

Abstract

In a bilayer consisting of an insulator and a ferromagnetic metal (FM), interfacial spin-orbit scattering leads to spin mixing of the two conducting channels of the FM, which results in an unconventional anisotropic magnetoresistance (AMR). We theoretically investigate the magnetotransport in such bilayer structures by solving the spinor Boltzmann transport equation with the generalized Fuchs-Sondheimer boundary condition that takes into account the effect of spin-orbit scattering at the interface. We find that the new AMR exhibits a peculiar angular dependence which can serve as a genuine experimental signature. We also determine the dependence of the AMR on film thickness as well as resistivity spin asymmetry of the FM.

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  • Received 13 April 2015
  • Revised 15 June 2015

DOI:https://doi.org/10.1103/PhysRevB.92.024412

©2015 American Physical Society

Authors & Affiliations

Steven S.-L. Zhang1,2,*, Giovanni Vignale1, and Shufeng Zhang2

  • 1Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, USA
  • 2Department of Physics, University of Arizona, Tucson, Arizona 85721, USA

  • *Corresponding author: zhangshule@missouri.edu

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Issue

Vol. 92, Iss. 2 — 1 July 2015

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