Disentangling bulk from surface contributions in the electronic structure of black phosphorus

E. Golias, M. Krivenkov, and J. Sánchez-Barriga
Phys. Rev. B 93, 075207 – Published 26 February 2016
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Abstract

Most recently, black phosphorus has come into focus as a promising material for future applications in nanoelectronic devices due to its unique electronic and transport properties. Here, we use angle-resolved photoemission spectroscopy in conjunction with ab initio calculations within the framework of density-functional theory to disentangle surface from the bulk contributions in the electronic structure of black phosphorus. We find good agreement between our theoretical predictions for the intra- and interlayer energy-momentum dispersions and the experimentally obtained three-dimensional band structure of this material. Our results provide compelling evidence for the existence of surface-resonant states near the top of the valence band, which can play an important role in the performance of electronic devices based on black phosphorus.

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  • Received 30 November 2015

DOI:https://doi.org/10.1103/PhysRevB.93.075207

©2016 American Physical Society

Authors & Affiliations

E. Golias, M. Krivenkov, and J. Sánchez-Barriga

  • Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Straße 15, 12489 Berlin, Germany

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Issue

Vol. 93, Iss. 7 — 15 February 2016

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