Abstract
Two-dimensional (2D) transition metal dichalogenides exhibit a unique band structure: In contrast to many direct-gap classical semiconductors, their band-gap minimum is not at the center of the Brillouin zone, but at finite values of the vector. We report on clear indications that this momentum mismatch fundamentally influences the carrier transfer between a 2D crystal and a three-dimensional (3D) GaN layer: Populating different local band extrema of the in space by selective laser excitation leads to a pronounced difference in the photoluminescence signal. These findings may be of high importance for future 2D-3D semiconductor devices.
- Received 24 November 2016
DOI:https://doi.org/10.1103/PhysRevB.95.081304
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