Figure 1

Kossel pattern of silicon at 12.914 keV. The bold black circle represents the exploited Si (800) reflection used for suppression of the $\pi$ component. All other possible reflections are depicted by thin colored circles. The vectors ${\overrightarrow{s}}_0$ and ${\overrightarrow{s}}_h$ describe the direction of the incident and diffracted wave respectively. In order to avoid degradation of the polarization purity due to multiple-beam cases, the azimuth has to be chosen such that the “distance” to the closest undesired reflections is as large as possible.Reuse & Permissions

Figure 2

Scheme of the experimental setup shown in transmission (upper part) and crossed polarizer (lower part) configuration. Also indicated are the other relevant angles besides the analyzer angle. For the polarizer, the Bragg angle ${\theta }_{\mathrm{B}}$ is adjusted by rotation about an axis vertical on the drawing plane. Rotation about an axis parallel to the channel affects the tilt angle and rotation about an axis perpendicular on the channel walls the azimuth.Reuse & Permissions

Figure 3

Measurement of the polarization purity of an x-ray beam of energy 6.457 keV using Si(400) six-reflection channel cuts. The inset displays the data in a double-logarithmic scale.Reuse & Permissions

Figure 4

X-ray polarimetry on a solution of sucrose. The shift of the position of maximum extinction (black curve) corresponds to a rotation of the polarization plane by 0.9 arcsec and an induced ellipticity ${ϵ}^2=2.3\times {10}^{-10}$. The green (lower) curve displays the measurement without the sample. Each data point has been measured 11 times as illustrated in the inset.Reuse & Permissions