Diamagnetic Susceptibility of Tetrahedral Semiconductors

S. Hudgens, Marc Kastner, and H. Fritzsche
Phys. Rev. Lett. 33, 1552 – Published 23 December 1974
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Abstract

The lattice contribution to the diamagnetic susceptibility, χL, is written as a sum of three terms, a core term χc, a Langevin-like valence-electron contribution χv, and a Van Vleck paramagnetic term χp using a one-oxcillator model. Measurements of χL and dχLdT for diamond, Si, Ge, GaAs, and GaP are presented. The model allows a separate determination of each of the three terms and relates these terms to the symmetry and extent of the valence-bond charge distribution.

  • Received 4 September 1974

DOI:https://doi.org/10.1103/PhysRevLett.33.1552

©1974 American Physical Society

Authors & Affiliations

S. Hudgens, Marc Kastner*, and H. Fritzsche

  • Department of Physics and The James Franck Institute, The University of Chicago, Chicago, Illinois 60637

  • *Present address: Department of Physics, Massachusetts Institute of Technology, Cambridge, Mass. 02139.

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Vol. 33, Iss. 26 — 23 December 1974

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