Time-Resolved Reflectivity Measurements of Femtosecond-Optical-Pulse-Induced Phase Transitions in Silicon

C. V. Shank, R. Yen, and C. Hirlimann
Phys. Rev. Lett. 50, 454 – Published 7 February 1983
PDFExport Citation

Abstract

The reflectivity of silicon has been measured following excitation with intense 90-fsec optical pulses. These measurements for the first time clearly resolve in time the process of energy transfer to the crystal lattice and the dynamics of the phase transition to the melted state.

  • Received 29 November 1982

DOI:https://doi.org/10.1103/PhysRevLett.50.454

©1983 American Physical Society

Authors & Affiliations

C. V. Shank, R. Yen, and C. Hirlimann

  • Bell Telephone Laboratories, Holmdel, New Jersey 07733

Comments & Replies

Time-Resolved Reflectivity Measurements in Silicon

Monique Combescot and Julien Bok
Phys. Rev. Lett. 51, 519 (1983)

Shank, Yen, and Hirlimann Respond

C. V. Shank, R. Yen, and C. Hirlimann
Phys. Rev. Lett. 51, 520 (1983)

References (Subscription Required)

Click to Expand
Issue

Vol. 50, Iss. 6 — 7 February 1983

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×