Insulator-Metal Crossover near Optimal Doping in Pr2xCexCuO4: Anomalous Normal-State Low Temperature Resistivity

P. Fournier, P. Mohanty, E. Maiser, S. Darzens, T. Venkatesan, C. J. Lobb, G. Czjzek, R. A. Webb, and R. L. Greene
Phys. Rev. Lett. 81, 4720 – Published 23 November 1998
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Abstract

Normal-state resistivity measurements at high fields and low temperatures in electron-doped Pr2xCexCuO4 thin films reveal an insulator-metal crossover near a doping level x0.15, similar to a previous report on hole-doped La2xSrxCuO4. The temperature dependence of the resistivity of insulatinglike samples is sublogarithmic, while for metallic samples (with x=0.17) the resistivity is linear from 40 mK to 40 K. This surprising latter observation suggests an unusual contribution to the scattering processes at low temperature in these materials. We conclude that the ground state at x=0.15, corresponding to the maximum transition temperature, is equivalent for hole- and electron-doped cuprates.

  • Received 28 May 1998

DOI:https://doi.org/10.1103/PhysRevLett.81.4720

©1998 American Physical Society

Authors & Affiliations

P. Fournier1, P. Mohanty1, E. Maiser1,2, S. Darzens1, T. Venkatesan1, C. J. Lobb1, G. Czjzek2, R. A. Webb1, and R. L. Greene2

  • 1Center for Superconductivity Research, Department of Physics, University of Maryland, College Park, Maryland 20742
  • 2Forschungszentrum Karlsruhe, Institut für nukleare Festkörperphysik, Postfach 36 40, D-76021 Karlsruhe, Germany

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Vol. 81, Iss. 21 — 23 November 1998

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