Paper
15 February 2012 Optical parametric oscillation in orientation patterned GaAs waveguides
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Abstract
Orientation patterned GaAs waveguides for parametric conversion from near to mid-infrared have been fabricated by MOCVD growth on OPGaAs templates. A monolithic OPO cavity was formed by dielectric facet coating. Parametric oscillation characteristics were investigated using a pulsed source tunable in the range of 1.98-2.05μm. Type I and II parametric interactions have been observed, differing in QPM wavelength. OPO threshold power of 7W, using a pulsed pump, and 5.7W using a CW laser was obtained in a 13mm long waveguide of 39μm period. Overall Parametric peak power of 0.6W at pulsed pump peak power of 11.6W was generated at signal & idler wavelengths of 3.6μm & 4.5μm respectively and pump wavelength of 2.015μm. Tuning curves for Type I and type II parametric operation in OPGaAs WGs have been calculated and verified by the measured signal and idler wavelengths.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. B. Oron, P. Blau, S. Pearl, and M. Katz "Optical parametric oscillation in orientation patterned GaAs waveguides", Proc. SPIE 8240, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications XI, 82400C (15 February 2012); https://doi.org/10.1117/12.911867
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Cited by 11 scholarly publications.
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KEYWORDS
Optical parametric oscillators

Gallium arsenide

Waveguides

Polarization

Signal processing

Dispersion

Reflectivity

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