Paper
18 December 2012 High numerical aperture silicon collimating lens for mid-infrared quantum cascade lasers manufactured using wafer-level techniques
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Abstract
We present an aspheric collimating lens for mid-infrared (4-14 μm) quantum cascade lasers. The lenses were etched into silicon by an inductively coupled plasma reactive ion etching system on wafer level. The high refractive index of silicon reduces the height of the lens profile resulting in a simple element working at high numerical aperture (up to 0.82). Wafer level processes enable the fabrication of about 5000 lenses in parallel. Such cost-effective collimating lens is a step towards the adoption of quantum cascade lasers for all its potential applications.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eric Logean, Lubos Hvozdara, Joab Di-Francesco, Hans Peter Herzig, Reinhard Voelkel, Martin Eisner, Pierre-Yves Baroni, Michel Rochat, and Antoine Müller "High numerical aperture silicon collimating lens for mid-infrared quantum cascade lasers manufactured using wafer-level techniques", Proc. SPIE 8550, Optical Systems Design 2012, 85500Q (18 December 2012); https://doi.org/10.1117/12.981165
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Silicon

Quantum cascade lasers

Semiconducting wafers

Mid-IR

Etching

Photoresist processing

Aspheric lenses

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