Facta universitatis - series: Electronics and Energetics 2016 Volume 29, Issue 4, Pages: 509-541
https://doi.org/10.2298/FUEE1604509P
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P-channel MOSFET as a sensor and dosimeter of ionizing radiation
Pejović Milić M. (Faculty of Electronic Engineering, Niš)
This paper presents a study of MOSFETs as a sensor and dosimeter of ionizing
radiation. The electrical signal used as a dosimetric parameter is the
threshold voltage. The functionality of these components is based on
radiation-induced ionization in SiO2, which results in increase of positive
charge trapped in the SiO2 and interface traps at Si-SiO2, leads to change in
threshold voltage. The first part of the paper deals with analysis of defect
precursors created by ionizing radiation, responsible for creation of fixed
and switching traps, as well as most important techniques for their
separation. Afterwards, the results for sensitive p-channel MOSFETs (RADFETs)
are presented, following with results for commercially available MOSFETs
applications as a sensors of ionizing radiation.
Keywords: Fixed traps, fading, MOSFET, RADFET, switching traps, threshold voltage shift
Projekat Ministarstva nauke
Republike Srbije, br. 32026