Journal of the Serbian Chemical Society 2021 Volume 86, Issue 11, Pages: 1075-1087
https://doi.org/10.2298/JSC200917065L
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Electrodeposition of aluminum-doped thin silicon films from a KF-KCl-KI-K2SiF6-AlF3 melt
Laptev Michael V. 
(Ural Branch of the Russian Academy of Sciences, Institute of High Temperature Electrochemistry, Ekaterinburg, Russian Federation)
Khudorozhkova Anastasia O. (Ural Branch of the Russian Academy of Sciences, Institute of High Temperature Electrochemistry, Ekaterinburg, Russian Federation)
Isakov Andrey V. (Ural Branch of the Russian Academy of Sciences, Institute of High Temperature Electrochemistry, Ekaterinburg, Russian Federation), ihte_uran@mail.ru
Grishenkova Olga V. (Ural Branch of the Russian Academy of Sciences, Institute of High Temperature Electrochemistry, Ekaterinburg, Russian Federation)
Zhuk Sergey I. (Ural Branch of the Russian Academy of Sciences, Institute of High Temperature Electrochemistry, Ekaterinburg, Russian Federation)
Zaikov Yurii P. (Ural Branch of the Russian Academy of Sciences, Institute of High Temperature Electrochemistry, Ekaterinburg, Russian Federation)
The regularities of silicon and aluminum co-deposition on glassy carbon from KF–KCl (2:1)–75 mol % KI–0.15 mol % K2SiF6–(up to 0.15 mol %) AlF3 melts at 998 K were studied by cyclic voltammetry, chronoamperometry, scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The cyclic voltammograms demonstrated the presence of only one cathodic peak (or nucleation loop at a low reverse potential) and the corresponding anodic peak. The cathodic peak shifted in the cathodic direction with decreasing concentration of aluminum ions in the melt or with increasing scan rate. The Scharifker–Hills model was used to analyze potentiostatic current density transients and estimate the values of the apparent diffusion coefficient and the number density of nuclei. The morphology and elemental analysis of the samples obtained during potentiostatic and galvanostatic deposition for 30–60 s were studied. Continuous thin silicon films doped with aluminum were obtained under galvanostatic conditions.
Keywords: molten salts, co-deposition, kinetics, 3D nucleation/growth.