Anisotropic Magnetoresistance Effect: General Expression of AMR Ratio and Intuitive Explanation for Sign of AMR Ratio

Satoshi Kokado; Masakiyo Tsunoda

doi:10.4028/www.scientific.net/AMR.750-752.978

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 750-752Anisotropic Magnetoresistance Effect: General...

Anisotropic Magnetoresistance Effect: General Expression of AMR Ratio and Intuitive Explanation for Sign of AMR Ratio

Abstract:

We derive the general expression of the anisotropic magnetoresistance (AMR) ratio of ferromagnets for a relative angle between the magnetization direction and the current direction. We here use the two-current model for a system consisting of a spin-polarized conduction state (s) and localized d states (d) with spin-orbit interaction. Using the expression, we analyze the AMR ratios of Ni and a half-metallic ferromagnet. These results correspond well to the respective experimental results. In addition, we give an intuitive explanation about a relation between the sign of the AMR ratio and the s-d scattering process.

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Periodical:

Advanced Materials Research (Volumes 750-752)

Pages:

978-982

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.750-752.978

Citation:

Cite this paper

Online since:

August 2013

Authors:

Satoshi Kokado, Masakiyo Tsunoda

Keywords:

Anisotropic Magnetoresistance, s-d Scattering, Spin-Orbit Interaction, Two-Current Model

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Creative Commons CC BY 4.0

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