Analysis of Different Vanadium Charge States in Vanadium Doped 6H-SiC by Low Temperature Optical Absorption and Electron Paramagnetic Resonance
p.787
p.787
Investigation of Electronic States of Pd in 4H-SiC by Means of Radiotracer-DLTS
p.791
p.791
Surface Preparation of 6H-Silicon Carbide Substrates for Growth of High-Quality SiC Epilayers
p.797
p.797
Electro-Chemical Mechanical Polishing of Silicon Carbide
p.801
p.801
Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates
p.805
p.805
Surface Modification of 3C-SiC for Good Ni Ohmic Contact
p.809
p.809
Mechanisms in Electrochemical Etching of α-SiC Substrates
p.813
p.813
Modification of the Silicon Carbide by Proton Irradiation
p.817
p.817
Etching of SiC with Fluorine ECR Plasma
p.821
p.821
Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
805-808
Citation:
Online since:
June 2004
Authors:
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