Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals

Takeshi Mitani; Shinichi Nakashima; Hajime Okumura; Hiroyuki Nagasawa

doi:10.4028/www.scientific.net/MSF.527-529.343

Paper Titles

Theory of Dislocations in SiC: The Effect of Charge on Kink Migration
p.321

Structure of Carrot Defects in 4H-SiC Epilayers
p.327

Characterization of SiC Crystals by Using Deep UV Excitation Raman Spectroscopy
p.333

Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy
p.339

Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals
p.343

Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC
p.347

Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes
p.351

Silicon Carbide: A Playground for 1D-Modulation Electronics
p.355

Peierls Barriers and Core Properties of Partial Dislocations in SiC
p.359

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Raman Scattering Analyses of Stacking Faults in...

Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals

Abstract:

Visible and deep UV Raman measurements have been applied to investigate the structural and electrical properties of stacking disordered 3C-SiC crystals. It is found that free-carrier density shows the significant dependence on the density of stacking faults in 3C-SiC. The density of stacking faults has been estimated from the comparison between experimentally obtained Raman spectra and Raman intensity profiles simulated using one-dimensional lattice models considering the disorder in bond polarizability arrangement.

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Silicon Carbide and Related Materials 2005

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Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

343-346

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.343

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Online since:

October 2006

Authors:

Takeshi Mitani, Shinichi Nakashima, Hajime Okumura, Hiroyuki Nagasawa

Keywords:

3C-SiC, Raman Scattering, Stacking Fault

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