A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films
Abstract
:1. Introduction
2. Materials and Methods
2.1. Sample Preparation
2.2. Physical, Chemical, and Electrical Analysis
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
- Böscke, T.S.; Müller, J.; Bräuhaus, D.; Schröder, U.; Böttger, U. Ferroelectricity in hafnium oxide thin films. Appl. Phys. Lett. 2011, 99, 102903. [Google Scholar] [CrossRef]
- Kim, S.J.; Narayan, D.; Lee, J.-G.; Mohan, J.; Lee, J.S.; Lee, J.; Kim, H.S.; Byun, Y.-C.; Lucero, A.T.; Summerfelt, S.R.; et al. Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget. Appl. Phys. Lett. 2017, 111, 242901. [Google Scholar] [CrossRef]
- Kim, S.J.; Narayan, D.; Lee, J.-G.; Mohan, J.; Lee, J.S.; Lee, J.; Young, C.D.; Kim, J.; Summerfelt, S.R.; San, T.; et al. Low temperature (400 °C) ferroelectric Hf0.5Zr0.5O2 capacitors for next-generation FRAM applications. In Proceedings of the 9th IEEE International Memory Workshop (IMW), Monterey, CA, USA, 14–17 May 2017. [Google Scholar]
- Kim, S.J.; Mohan, J.; Kim, H.S.; Lee, J.; Young, C.D.; Colombo, L.; Summerfelt, S.R.; San, T.; Kim, J. Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors. Appl. Phys. Lett. 2018, 113, 182903. [Google Scholar] [CrossRef]
- Kim, S.J.; Mohan, J.; Young, C.D.; Colombo, L.; Kim, J.; Summerfelt, S.R.; San, T. Ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors with low-voltage operation and high reliability for next-generation FRAM applications. In Proceedings of the 10th IEEE International Memory Workshop (IMW), Kyoto, Japan, 13–16 May 2018. [Google Scholar]
- Park, M.H.; Lee, Y.H.; Kim, H.J.; Kim, Y.J.; Moon, T.; Kim, K.D.; Müller, J.; Kersch, A.; Schroeder, U.; Mikolajick, T.; et al. Ferroelectricity and antiferroelectricity of doped thin HfO2-base films. Adv. Mater. 2015, 27, 1811–1831. [Google Scholar] [CrossRef] [PubMed]
- Kim, S.J.; Mohan, J.; Summerfelt, S.R.; Kim, J. Ferroelectric thin Hf0.5Zr0.5O2 films: A review of recent advances. JOM 2019, 71, 246–255. [Google Scholar] [CrossRef]
- Schroeder, U.; Materano, M.; Mittmann, T.; Lomenzo, P.D.; Mikolajick, T.; Toriumi, A. Recent progress for obtaining the ferroelectric phase in hafnium oxide based films impact of oxygen and zirconium. Jpn. J. Appl. Phys. 2019, 58, SL0801. [Google Scholar] [CrossRef]
- Materlik, R.; Künneth, C.; Kersch, A. The origin of ferroelectricity in Hf1-xZrxO2: A computational investigation and a surface energy model. J. Appl. Phys. 2015, 117, 134109. [Google Scholar] [CrossRef] [Green Version]
- Park, M.H.; Kim, H.J.; Kim, Y.J.; Moon, T.; Hwang, C.S. The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity. Appl. Phys. Lett. 2014, 104, 072901. [Google Scholar] [CrossRef]
- Shiraishi, T.; Katayama, K.; Yokouchi, T.; Shimizu, T.; Oikawa, T.; Sakata, O.; Uchida, H.; Imai, Y.; Kiguchi, T.; Konno, T.J.; et al. Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films. Appl. Phys. Lett. 2016, 108, 262904. [Google Scholar] [CrossRef]
- Park, M.H.; Kim, H.J.; Kim, Y.J.; Lee, W.; Moon, T.; Kim, K.D.; Hwang, C.S. Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes. Appl. Phys. Lett. 2014, 105, 072902. [Google Scholar] [CrossRef]
- Cao, R.; Song, B.; Shang, D.; Yang, Y.; Luo, Q.; Wu, S.; Li, Y.; Wang, Y.; Lv, H.; Liu, Q.; et al. Improvement of endurance in HZO-based ferroelectric capacitor using Ru electrode. IEEE Electron Dev. Lett. 2019, 40, 1744. [Google Scholar] [CrossRef]
- Kim, S.J.; Mohan, J.; Kim, H.S.; Lee, J.; Hwang, S.M.; Narayan, D.; Lee, J.-G.; Young, C.D.; Colombo, L.; Goodman, G.; et al. Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors. Appl. Phys. Lett. 2019, 115, 182901. [Google Scholar] [CrossRef]
- Kim, S.J.; Mohan, J.; Lee, J.S.; Kim, H.S.; Lee, J.; Young, C.D.; Colombo, L.; Summerfelt, S.R.; San, T.; Kim, J. Stress-induced crystallization of thin Hf1-XZrXO2 films: The origin of enhanced energy density with minimized energy loss for lead-free electrostatic energy storage applications. ACS Appl. Mater. Interfaces 2019, 11, 5208–5214. [Google Scholar] [CrossRef]
- Kim, S.J.; Mohan, J.; Lee, J.; Lee, J.S.; Lucero, A.T.; Young, C.D.; Colombo, L.; Summerfelt, S.R.; San, T.; Kim, J. Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films. Appl. Phys. Lett. 2018, 112, 172902. [Google Scholar] [CrossRef]
- Chen, K.-S.; Chen, T.Y.-F.; Chuang, C.-C.; Lin, I.-K. Full-field wafer level thin film stress measurement by phase-stepping shadow moiré. IEEE Trans. Comp. Packag. Technol. 2004, 27, 594–601. [Google Scholar] [CrossRef]
- Feng, X.; Huang, Y.; Rosakis, A.J. Stresses in a multilayer thin film/substrate system subjected to nonuniform temperature. J. Appl. Mech.-Trans. ASME 2008, 75, 021022. [Google Scholar] [CrossRef] [Green Version]
- Spaepen, F. Interfaces and stresses in thin films. Acta Mater. 2000, 48, 31–42. [Google Scholar] [CrossRef]
- Onaya, T.; Nabatame, T.; Sawamoto, N.; Ohi, A.; Ikeda, N.; Chikyow, T.; Ogura, A. Improvement in ferroelectricity of HfXZr1-XO2 thin films using ZrO2 seed layer. Appl. Phys. Express 2017, 10, 081501. [Google Scholar] [CrossRef]
- Hoffmann, M.; Schroeder, U.; Schenk, T.; Shimizu, T.; Funakubo, H.; Sakata, O.; Pohl, D.; Drescher, M.; Adelmann, C.; Materlik, R.; et al. Stabilizing the ferroelectric phase in doped hafnium oxide. J. Appl. Phys. 2015, 118, 072006. [Google Scholar] [CrossRef]
- Fengler, F.P.G.; Nigon, R.; Muralt, P.; Grimley, E.D.; Sang, X.; Sessi, V.; Hentschel, R.; Lebeau, J.M.; Mikolajick, T.; Schroeder, U. Analysis of performance instabilities of hafnia-based ferroelectrics using modulus spectroscopy and thermally stimulated depolarization currents. Adv. Electron. Mater. 2018, 4, 1700547. [Google Scholar] [CrossRef]
- Islamov, D.R.; Gritsenko, V.A.; Perevalov, T.V.; Pustovarov, V.A.; Orlov, O.M.; Chernikova, A.G.; Markeev, A.M.; Slesazeck, S.; Schroeder, U.; Mikolajick, T.; et al. Identification of the nature of traps involved in the field cycling of Hf0.5Zr0.5O2-based ferroelectric thin films. Acta Mater. 2019, 166, 47–55. [Google Scholar] [CrossRef]
- Han, J.-P.; Ma, T.P. Electrode dependence of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O3 and SrBi2Ta2O9 thin films. Appl. Phys. Lett. 1997, 71, 1267. [Google Scholar] [CrossRef] [Green Version]
- Aggarwal, S.; Perusse, S.R.; Tipton, C.W.; Ramesh, R. Effect of hydrogen on Pb(Zr,Ti)O3-based ferroelectric capacitors. Appl. Phys. Lett. 1998, 73, 1973. [Google Scholar] [CrossRef]
- Park, M.H.; Kim, H.J.; Kim, Y.J.; Lee, W.; Kim, H.K.; Hwang, C.S. Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes. Appl. Phys. Lett. 2013, 102, 112914. [Google Scholar] [CrossRef]
- Shekhawat, A.; Walters, G.; Chung, C.-C.; Garcia, R.; Liu, Y.; Jones, J.; Nishida, T.; Moghaddam, S. Effect of forming gas furnace annealing on the ferroelectricity and wake-up effect of Hf0.5Zr0.5O2 thin films. ECS J. Solid State Sci. Technol. 2020, 9, 024011. [Google Scholar] [CrossRef]
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Kim, S.J.; Mohan, J.; Kim, H.S.; Hwang, S.M.; Kim, N.; Jung, Y.C.; Sahota, A.; Kim, K.; Yu, H.-Y.; Cha, P.-R.; et al. A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films. Materials 2020, 13, 2968. https://0-doi-org.brum.beds.ac.uk/10.3390/ma13132968
Kim SJ, Mohan J, Kim HS, Hwang SM, Kim N, Jung YC, Sahota A, Kim K, Yu H-Y, Cha P-R, et al. A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films. Materials. 2020; 13(13):2968. https://0-doi-org.brum.beds.ac.uk/10.3390/ma13132968
Chicago/Turabian StyleKim, Si Joon, Jaidah Mohan, Harrison Sejoon Kim, Su Min Hwang, Namhun Kim, Yong Chan Jung, Akshay Sahota, Kihyun Kim, Hyun-Yong Yu, Pil-Ryung Cha, and et al. 2020. "A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films" Materials 13, no. 13: 2968. https://0-doi-org.brum.beds.ac.uk/10.3390/ma13132968