Next Article in Journal
Advances in Phytonanotechnology: A Plant-Mediated Green Synthesis of Metal Nanoparticles Using Phyllanthus Plant Extracts and Their Antimicrobial and Anticancer Applications
Previous Article in Journal
Bromine Ion-Intercalated Layered Bi2WO6 as an Efficient Catalyst for Advanced Oxidation Processes in Tetracycline Pollutant Degradation Reaction
Previous Article in Special Issue
State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots
 
 
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Editorial

Electrical, Optical, and Transport Properties of Semiconductors

Università degli Studi “Niccolò Cusano”, ATHENA European University, Via don Carlo Gnocchi 3, 00166 Rome, Italy
*
Author to whom correspondence should be addressed.
Nanomaterials 2023, 13(19), 2615; https://0-doi-org.brum.beds.ac.uk/10.3390/nano13192615
Submission received: 24 August 2023 / Accepted: 1 September 2023 / Published: 22 September 2023
(This article belongs to the Special Issue Electrical, Optical, and Transport Properties of Semiconductors)
Nanostructured semiconductors have driven the research in electronic and optoelectronic devices in the new millennium era. Considering the three space dimensions, length, width and height, researchers usually classify nanostructured materials from 0D, where all three of them are nano-sized (usually considered less than the 100 nm threshold), to 1D where length exceed the nano-sized limit and to 2D where only height is nano-sized. This special issue was open to scientific contributions to all these forms of nanostructured materials and, as depicted in the following histogram (Figure 1), we collected researches regarding all types of nanostructures with main focus on layered nanomaterials (2D).
The prevalence of studies on 2D nanomaterials is not surprising at all since charge transport properties, the special issue main topic, are very important in surfaces to study fundamental physical properties [1,2,3], realize innovative sensors [4] or optimizing optoelectronic performances [5]. Precisely for the fundamental device of electronics, the transistor, miniaturization according to Moore’s law has brought charge transport in the channel region closer to that of two-dimensional (2D) materials with also the development of electrical connections issues [6]. 2D materials like Molibdenum or Tungsten Disulphide retains excellent electrical transport even at the monolayer level, and their deep study according to different atmospheric environment [7] is of enormous interest for the future development of digital electronics and of all applications based on it such as artificial intelligence [8]. Regarding 0D nanomaterials the three papers [9,10,11] mainly focused on the very important topic of modelling quantum dots constituted by III-V elements with a special dedication possible electromechanical coupling possibly present in flexible displays electronics like in the Samsung high quality products series Zflip-Zfold.
Finally, I would like to sincerely thank all the authors who contributed their scientific products to this special issue. The results and conclusions presented in this special issue will surely be useful for researchers working in the field of nanodevices and nanotechnology, providing the insights for carrying out new scientific studies.

Author Contributions

A.O. is responsible for published research analysis and editorial writing. S.S. performed general review and editing. All authors have read and agreed to the published version of the manuscript.

Acknowledgments

I would like to thank all the authors who contributed their most recent research to this Special Issue. We would like to thank also all those who contributed to the success of this Special Issue for their patience, help and dedication.

Conflicts of Interest

The authors declare no conflict of interest.

References

  1. Basyooni, M.A.; Al-Dossari, M.; Zaki, S.E.; Eker, Y.R.; Yilmaz, M.; Shaban, M. Tuning the Metal–Insulator Transition Properties of VO2 Thin Films with the Synergetic Combination of Oxygen Vacancies, Strain Engineering, and Tungsten Doping. Nanomaterials 2022, 12, 1470. [Google Scholar] [CrossRef] [PubMed]
  2. Orsini, A.; Barettin, D.; Ercoli, F.; Rossi, M.C.; Pettinato, S.; Salvatori, S.; Mezzi, A.; Polini, R.; Bellucci, A.; Mastellone, M.; et al. Charge Transport Mechanisms of Black Diamond at Cryogenic Temperatures. Nanomaterials 2022, 12, 2253. [Google Scholar] [CrossRef]
  3. Orsini, A.; Barettin, D.; Pettinato, S.; Salvatori, S.; Polini, R.; Rossi, M.C.; Bellucci, A.; Bolli, E.; Girolami, M.; Mastellone, M.; et al. Frenkel-Poole Mechanism Unveils Black Diamond as Quasi-Epsilon-Near-Zero Surface. Nanomaterials 2023, 13, 240. [Google Scholar] [CrossRef] [PubMed]
  4. Van Duy, L.; Nguyet, T.T.; Le, D.T.T.; Van Duy, N.; Nguyen, H.; Biasioli, F.; Tonezzer, M.; Di Natale, C.; Hoa, N.D. Room Temperature Ammonia Gas Sensor Based on p-Type-like V2O5 Nanosheets towards Food Spoilage Monitoring. Nanomaterials 2023, 13, 146. [Google Scholar] [CrossRef]
  5. Obraztsova, A.A.; Barettin, D.; Furasova, A.D.; Voroshilov, P.M.; Auf der Maur, M.; Orsini, A.; Makarov, S.V. Light-Trapping Electrode for the Efficiency Enhancement of Bifacial Perovskite Solar Cells. Nanomaterials 2022, 12, 3210. [Google Scholar] [CrossRef] [PubMed]
  6. Zhao, K.; Hu, Y.; Du, G.; Zhao, Y.; Dong, J. Mechanisms of Scaling Effect for Emerging Nanoscale Interconnect Materials. Nanomaterials 2022, 12, 1760. [Google Scholar] [CrossRef] [PubMed]
  7. Basyooni, M.A.; Zaki, S.E.; Alfryyan, N.; Tihtih, M.; Eker, Y.R.; Attia, G.F.; Yılmaz, M.; Ateş, Ş.; Shaban, M. Nanostructured MoS2 and WS2 Photoresponses under Gas Stimuli. Nanomaterials 2022, 12, 3585. [Google Scholar] [CrossRef] [PubMed]
  8. Huang, X.; Liu, C.; Zhou, P. 2D semiconductors for specific electronic applications: From device to system. npj 2D Mater. Appl. 2022, 6, 51. [Google Scholar] [CrossRef]
  9. Barettin, D.; Sakharov, A.V.; Tsatsulnikov, A.F.; Nikolaev, A.E.; Pecchia, A.; Auf der Maur, M.; Karpov, S.Y.; Cherkashin, N. Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs. Nanomaterials 2023, 13, 1367. [Google Scholar] [CrossRef] [PubMed]
  10. Barettin, D. State of the Art of Continuous and Atomistic Modeling of Electromechanical Properties of Semiconductor Quantum Dots. Nanomaterials 2023, 13, 1820. [Google Scholar] [CrossRef] [PubMed]
  11. Barettin, D.; Sakharov, A.V.; Tsatsulnikov, A.F.; Nikolaev, A.E.; Cherkashin, N. Electromechanically Coupled III-N Quantum Dots. Nanomaterials 2023, 13, 241. [Google Scholar] [CrossRef] [PubMed]
Figure 1. Number of articles published in the Special issue per nanostructures dimensionality.
Figure 1. Number of articles published in the Special issue per nanostructures dimensionality.
Nanomaterials 13 02615 g001
Disclaimer/Publisher’s Note: The statements, opinions and data contained in all publications are solely those of the individual author(s) and contributor(s) and not of MDPI and/or the editor(s). MDPI and/or the editor(s) disclaim responsibility for any injury to people or property resulting from any ideas, methods, instructions or products referred to in the content.

Share and Cite

MDPI and ACS Style

Orsini, A.; Salvatori, S. Electrical, Optical, and Transport Properties of Semiconductors. Nanomaterials 2023, 13, 2615. https://0-doi-org.brum.beds.ac.uk/10.3390/nano13192615

AMA Style

Orsini A, Salvatori S. Electrical, Optical, and Transport Properties of Semiconductors. Nanomaterials. 2023; 13(19):2615. https://0-doi-org.brum.beds.ac.uk/10.3390/nano13192615

Chicago/Turabian Style

Orsini, Andrea, and Stefano Salvatori. 2023. "Electrical, Optical, and Transport Properties of Semiconductors" Nanomaterials 13, no. 19: 2615. https://0-doi-org.brum.beds.ac.uk/10.3390/nano13192615

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop